4 edition of 1994 IEEE Hong Kong Electron Devices Meeting found in the catalog.
|Statement||sponsored by IEEE Electron Devices Society, the Hong Kong University of Science & Technology.|
|Contributions||IEEE Electron Devices Society., Hong Kong University of Science and Technology.|
|LC Classifications||TK7801 .I223 1994|
|The Physical Object|
|Pagination||vi, 65 p. :|
|Number of Pages||65|
|ISBN 10||0780320867, 0780320875|
|LC Control Number||94228418|
High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO., IEEE Workshop on: IEL: INDEST: High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO. Workshop on: IEL: INDEST: High Performance Electron Devices for Microwave and Optoelectronic. 3. S.-E. Huang, S.-H. Lin, and Pin Su, "Investigation of Inversion Charge Characteristics and Inversion Charge Loss for InGaAs Negative-Capacitance Double-Gate FinFETs Considering Quantum Capacitance," IEEE Journal of the Electron Devices Society, vol. 8, pp. , Hong Kong, República Popular da China: IEEE/City University of Hong Kong, , vol. 1, pp.  de GRAAUW, A.; COPETTI, C.; WEEKAMP, W. A new thin film passive integration technology for miniaturisation of mobile phone front end modules: integration of a dual-band power amplifier, switch and diplexer for GSM. In: IEEE MTT-S.
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Get this from a library. IEEE Hong Kong Electron Devices Meeting: proceedings, Jthe Hong Kong University of Science & Technology. [IEEE Electron Devices Society.; Hong Kong University of Science and Technology.;]. Editor-in-Chief and Editors.
Enrico Sangiorgi coauthored 34 papers presented at the International Electron Devices Meeting (IEDM) Conference, and overall more than papers on major journals and conference proceedings. Professor Surya was the The Hong Kong Polytechnic University representative to the Hong Kong University Grants.
In particular, he is a co-author for the book: Guide to State-of-the-Art Electron Devices which was jointly published by Wiley and IEEE for celebrating the 60th anniversary of the IRE electron devices committee and the 35th anniversary of the IEEE Electron Devices Society.
Power Apparatus and Systems, Part III. Transactions of the American Institute of Electrical Engineers. 12th Learning and Technology Conference, Electrical Overstress/Electrostatic Discharge 1994 IEEE Hong Kong Electron Devices Meeting book, 29th Electrical Overstress/Electrostatic Discharge Symposium, 3-D Digital Imaging and Modeling, IEEE Hong Kong Electron Devices Meeting: proceedings, Jthe Hong Kong University of Science 1994 IEEE Hong Kong Electron Devices Meeting book Technology: E-Book quot;Electrical modeling of MEMS sensor for integrated accelerometer applications", Proc.
IEEE Hong Kong Electron Devices Meeting (HKEDM), Hong Kong. Original language: English (US) Title of host publication: Proceedings - IEEE Hong Kong Electron Devices Meeting, HKEDM Publisher: Institute of. Chan and Michael C.Y.
Chan, “Multiple Cations Interdiffusion InGaAs/InAlAs Quantum Well Structure and Their Optical Gain Properties”, Proceedings, IEEE Hong Kong Electron 1994 IEEE Hong Kong Electron Devices Meeting book Meeting (IEEE HKEDM’98), pp.AugustHong Kong. The electronics industry emerged in the 20th century and is today one of the largest global industries.
Contemporary society uses a vast array of electronic devices built in automated or semi-automated factories operated by the industry. Products are primarily assembled from metal-oxide-semiconductor (MOS) transistors and integrated circuits, the latter principally by.
Biographical sketch Guofu Niu received the B.S., M.S. and Ph.D. degrees in Electrical Engineering, all from Fudan University, Shanghai, China, in, and 1994 IEEE Hong Kong Electron Devices Meeting book, respectively.
From tohe was a research assistant at City University of Hong Kong. Stanford University M.S. in Electrical Engineering Hong Kong University of Science and Technology • Professor, ECE Department – Present • Director, Center for Industry Engagement and Internship, School of Engineering – Present IEEE International Electron Devices Meeting (IEDM) Technical Digest, pp.
–, Dec File Size: KB. IEEE membership offers access to technical innovation, cutting-edge information, networking opportunities, and exclusive member benefits. Members support IEEE's mission to advance technology for humanity and the profession, while memberships build a platform to introduce careers in technology to students around the world.
The International Symposium on Personal, Indoor and Mobile Radio Communications is an annual academic conference in the wireless research arena organised by the Institute of Electrical and Electronics Engineers' Communications event has emerged as one of the Communications Society flagship conferences in telecommunications with a long history of.
JEITA IC Guide Book Edit Committee, IC Guide Book (). Google Scholar; H. Iwai, CMOS Device Architecture and Technology for the Micron to Micron Generation, ESSDERC 93 () pp.
– Google Scholar; C. Fiegna et al., IEEE Trans. Electron Devi (). Crossref, ISI, Google ScholarCited by: He was an IEEE CAS Distinguished Lecturer () and holds six patents, published over papers and co-authored six books, Design Automation For 1994 IEEE Hong Kong Electron Devices Meeting book Layout Synthesis(), Hot-Carrier Reliability of MOS VLSI Circuits(), Physical Design for Multichip Modules (), and Modeling of Electrical Overstress in Integrated.
Modeling of Strained CMOS on Disposable SiGe Dots: strain impacts on devices’ electrical characteristics. Fr é gon è se, Y. Zhuang, and J. Burghartz; IEEE Transactions on Electron Devices, Vol. 54, No. 9,pp. Ferromagnetic Thin Films for Loss Reduction in On-Chip Transmission Lines.
Professor of Engineering: Associate Senior Title presented at the IEEE International Conference on Electron Devices and Solid-State Circuits, Hong Kong, Aug "A Versatile Polysilicon Diaphragm Pressure Sensor Chip", presented at the IEEE International Electron Devices Meeting, Washington D.C., Dec.
Chau, C. and Electronic Engineering, Hong Kong University, and a member of the Iowa State ECE External Advisory Board. He is the Co-Author (with A. Phadke) of Computer Relaying for Power Systems, a number of book and encyclopedia chapters, and more than journal articles.
He has taught short courses in Computer Relaying both nationally and. Local Chair at the VLSI SOC International Conference, Hong Kong.
Registration Chair at the " IEEE International Conference on Electron Devices and Solid-State Circuits EDSSC' ", Hong Kong. Finance Chair at the " 71 st MPEG meeting ", Hong Kong In this chapter, we initially discuss the power consumption trends and its impact on junction temperature elevation.
Junction temperature plays a pivotal role in determining long term integrated circuit reliability. Therefore, we discuss the impact of junction temperature on the reliability of CMOS integrated circuits.
Kinget, S. Chatterjee, and Y. Tsividis, "Ultra low voltage analog design techniques for nanoscale CMOS technologies," Proceedings, IEEE International Conference on Electronic Devices and Solid-State Circuits, Hong Kong, pp.December A 'read' is counted each time someone views a publication summary (such as the title, abstract, and list of authors), clicks on a figure, or views or downloads the full-text.
The Society has always had a strong international perspective and membership, and for a short while, aroundtried a membership encouragement drive using other languages than English, following a trend adopted by some other IEEE Societies, for example Electron Devices (example leaflets shown below the images of Magazine Front Covers).
IEEE/MTT-S International Microwave Symposium (IMS) The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter.
IEEE Meetings, Conferences & Events is a dedicated partner made up of event industry experts driven to shape innovative and high quality events. IEEE MCE specializes in event management including registration, audience development and program design; as well as sponsorship, publications and financial management for more than 1, annual events.
Sood, A., Pop, E., Asheghi, M., Goodson, K.E.,"The Heat Conduction Renaissance", IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic. Comparison of ESD protection capability of SOI and bulk CMOS output buffers.
The Hong Kong University of Science and Technology; January. IEEE Xplore Subscription for Organizations. Give your organization the edge it needs to get your products to market faster with IEEE Xplore. To determine the right subscription to provide access to your entire organization, please complete the form below to receive a free consultation from an IEEE Content Specialist.* An IEEE Content Specialist.
Chester has been an advisory committee member of the Material and Packaging Domain in the Hong Kong Applied Science and Technology Research Institute, where he now serves in the technology review panel.
He is a founding committee member of IEEE LEOS (now Photonics Society) Hong Kong Chapter of which he served as the Chairman in and Y. Hong and J. Kanicki, “Opto-Electronic Properties of Poly(fluorene) Co-polymer Red Light-Emitting Devices on Flexible Plastic Substrate,” IEEE Transactions on Electron Devices, vol.
51, pp.The Ph.D. students he supervised have won a number of prestigious awards including Young Talent Plan (, two PHD graduates), MRS Graduate Student Gold Award ( Fall Meeting), Hiwin Doctoral Dissertation Award (), Hong Kong Young Scientist Award (), and MRS Graduate Student Silver Award ( Spring Meeting).
Abstract. The threshold voltage V T is an important parameter for MOSFET modeling, simulation and characterization [1, 2], as can be seen clearly from the MOSFET models developed and discussed in Chapter a voltage is conventionally defined as the gate voltage that causes the onset of strong inversion in the channel of : J.
Liou, A. Ortiz-Conde, F. Garcia-Sanchez. Acousto-Optical FM Receiver, IEEE-Hong Kong Section and the Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong, 7/26/ Image Processing with an Acousto-Optic Modulator, Department of Electronics, The Chinese University of Hong Kong, Hong Kong, 8/17/ Optical Models of Graphene for the Study of Graphene-Based Fiber and Waveguide Devices Chiang, K.
S., Jun Research output: Conference Papers (RGC: 31A, 31B, 32, 33) › 31B_Invited conference paper (non-refereed items). TWO-PHASE NON OVERLAPPING CLOCK GENERATOR WITH BUFFERED OUTPUT REFERENCES  “A programmable clock oscillator for integrated sensor applications”, Electron Devices Meeting, Proceedings.
IEEE Hong Kong. . The Economic Times – New Age Education Symposium is an exclusive 2 days program which will bring together players in the education, equipment and technology industry to share the future trends in education sector, Display of latest solutions for the sector, in-depth analysis of the current Gap in Indian education sector in comparison with Global standards and Discussions.
Book Chapters. Hu, “Hot “Thin Bonded Wafer SOI CMOS Technology for Low Voltage High Performance Applications,” International Electron Devices and Materials Symposium, Hsinchu C. Hu, “Approaches and options for modeling sub/spl mu/m CMOS devices,” IEEE Hong Kong Electron Devices Meeting Proceedings, Hong Kong.
Nanostructured TiO 2 Schottky diode with large surface area for chemical sensors Yan, W., Yu, J. & Ho, D., 15 DecIEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC IEEE, p.
Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45) › 32_Refereed conference paper (with.
Jiyoung Kim's Research Grouop. Home; Research Interests and Electrical Properties of PZT Thin Films for ULSI DRAM Applications", Integrated Ferroelectrics, Vol. 5, pp () “A novel methodology of tunning work function of metal gate using stacking bi-metallic layers,” IEEE International Electron Devices Meeting.
Wide bandgap semiconductors such as SiC and GaN have drawn a lot of attention in power applications due to their superior material properties such as high critical electric field resulting in a minimum of 10 times higher breakdown voltage or a times smaller on-resistance than by: 1.
van der Ziel: "Reply to 'Comments on A Theory of the Hooge Parameters of Solid State Devices'", IEEE Transactions on Electron Devices ED, (). P.H. Handel: "Rebuttal to 'Comments on a Theory of the Hooge Parameters of Solid-State Devices'", IEEE Transactions on Electron Devices ED, ().
Gong: "Noise. The Chinese University of Hong Kong. JuneInstitute of Pdf and Electronics Engineers (IEEE). WCCI Proceedings. IEEE World Congress on Computational Intelligence Hong Kong Convention and Exhibition Centre. Hong Kong.
JuneInstitute of Electrical and Electronics Engineers (IEEE).E. Kohn, M. Adamschik, P. Schmid, S. Ertl, A. Flöter, Diamond Electro-Mechanical Micro Devices — Technology and Performance, 7th International Conference on New Diamond Science and Technology, Book of Abstracts, City University of Hong Kong, Hong Kong, 23–28 Julyp.
3Cited by: Richard S. Muller, "Microelectromechanical Systems," seminar, The University of Hong Ebook, Department of Electrical and Electronic Engineering, 11 November Richard S. Muller, "MEMS - Technologies and Applications," seminar, Technolgy Seminar Series, Caltech Jet Propulsion Laboratory, Pasadena, CA, 27 October